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- W2124063733 abstract "Thin film solar cells with Copper Indium Gallium Diselenide (Cu(In,Ga)Se2) absorber layers is one of the most promising candidates to emerge as an efficient solar cell technology in the near future. CIGS cells with efficiencies of 19.2 % have already been reported [1]. In this study, CIGS absorber layers are fabricated by a two-stage all-solidstate manufacture-friendly process. In the first stage, designated as precursor deposition, Copper and Gallium are sequentially deposited followed by co-deposition of Indium and Selenium. In the second stage, designated as selenization, the substrate is annealed at high temperatures in a selenium environment during which a thin layer of copper is also deposited. The typical thickness of the absorber layers fabricated by this process is around 2μm. The ZnO transparent front contact of these cells is a bi-layer with a thin intrinsic layer and a thicker Al doped n-type layer. These layers have been fabricated by different methods using Al-doped and undoped ZnO targets. The effect of the intrinsic layer thickness on the device performance was studied. Best performances were obtained when the intrinsic layer was around 350 A thick and fabricated from an Al-doped ZnO target with excess oxygen partial pressure during deposition. The main focus of this work is to reduce the thickness of the CIGS absorber layers with no or minor loss in efficiency as this would translate directly into reduction in production costs and the amount of material being used. Reducing the thickness can be done either by reducing the deposition rates or duration of deposition. Due to the complex time-" @default.
- W2124063733 created "2016-06-24" @default.
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- W2124063733 date "2005-01-01" @default.
- W2124063733 modified "2023-09-26" @default.
- W2124063733 title "Effect of heat treatments and reduced absorber layer thickness on cu(in,ga)se2 thin film solar cells" @default.
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