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• W2124183178 abstract "A new nonquasi-static nonlinear model of electron devices is proposed by adopting a perturbed charge-controlled approach. The model is based on the definition of a virtual quasi-static device, associated with the actual one, which is controlled by means of equivalent voltage sources. The advantage of this approach is that conventional purely quasi-static models can be still adopted even at very high frequencies, if suitable equivalent voltages are applied. Identification from small-signal measurements and implementation into commercially available computer-aided design tools of the new nonquasi-static model are described in this paper. Finally, by considering a GaAs p-high electron mobility transistor, accurate prediction capabilities at microwaves and millimeter frequencies are experimental verified and compared with a more conventional equivalent-circuit-based model" @default.
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• W2124183178 date "2006-12-01" @default.
• W2124183178 modified "2023-09-25" @default.
• W2124183178 title "A Nonquasi-Static Empirical Model of Electron Devices" @default.
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• W2124183178 doi "https://doi.org/10.1109/tmtt.2006.885879" @default.
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