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- W2124414172 abstract "Organic thin film transistors (OTFTs) with modified gate insulator were demonstrated in this paper. The modified gate insulator layers consisted of SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> as the gate insulator and OTS ( octadecyltrichlorosilane ) or PMMA (Poly(methyl methacylate)) as the modified layer. The devices with the modified layer had field-effect mobility larger than 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /Vs, which was twice than that of the OTFT without modification. The on/off current ratio was increased one order of magnitude and reached more than 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sup> . The leakage current was decreased from 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-9</sup> A to 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-10</sup> A. The results demonstrate that using modified gate insulators can obviously improve the performance of the OTFTs." @default.
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- W2124414172 date "2007-06-01" @default.
- W2124414172 modified "2023-10-16" @default.
- W2124414172 title "Improved Performance Organic Thin-film Transistors with Modified Gate Insulators" @default.
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- W2124414172 doi "https://doi.org/10.1109/hdp.2007.4283618" @default.
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