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• W2124530909 abstract "We theoretically estimate the performance limits of the effective injection velocity, v <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>s</inf> , and ƒ <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T</inf> in the nano-scale InAs HEMTs using the quantum-corrected Monte Carlo (MC) method. The negative tail of the momentum distribution function, ƒ (x, k <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</inf> ) at the potential bottleneck is caused by the electron scatterings. As L <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>g</inf> decreases, the negative tail decreases: which results in the increase of v <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>s</inf> . Because of the lower effective mass of InAs, the InAs HEMTs show higher v <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>s</inf> than those in the InGaAs HEMTs and the Si MOSFETs. At L <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>g</inf> = 10 nm, v <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>s</inf> is estimated to be about 4.4 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>7</sup> cm/s, which is almost reaching the ballistic limit. We calculate the delay time distribution, τ (x), and define the effective gate length, L <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>g,eff</inf> , on the basis of τ (x). Then we estimate the upper limit of ƒ <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T</inf> , ƒ <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T,max</inf> , by extrapolating ƒ <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T</inf> to the lower limit of L <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>g,eff</inf> . ƒ <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T,max</inf> is 3.6 THz for the InAs HEMTs, which improves from 3.0 THz for the InGaAs HEMTs. These results indicate the superior potential of the InAs HEMTs for future logic, communication and terahertz applications." @default.
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• W2124530909 date "2009-05-01" @default.
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• W2124530909 title "Theoretical study of performance limits in nano-scale InAs HEMTS based on quantum-corrected Monte Carlo method" @default.
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• W2124530909 doi "https://doi.org/10.1109/iciprm.2009.5012457" @default.
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