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• W2124657266 abstract "Spacer defined double patterning (SDDP) enables further pitch scaling using 193nm immersion lithography. This work aims to design and generate 20nm half pitch (HP) back-end-of-line test structures for single damascene metallization using SDDP with a 3-mask flow. We demonstrated patterning and metallization of 20nm HP trenches in silicon oxide with TiN metal hard mask (MHM)." @default.
• W2124657266 created "2016-06-24" @default.
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• W2124657266 date "2010-06-01" @default.
• W2124657266 modified "2023-10-01" @default.
• W2124657266 title "Integration of 20nm half pitch single damascene copper trenches by spacer-defined double patterning (SDDP) on metal hard mask (MHM)" @default.
• W2124657266 cites W1969786523 @default.
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• W2124657266 doi "https://doi.org/10.1109/iitc.2010.5510743" @default.
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