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- W2124940615 abstract "This paper presents results of [100] silicon etching using XeF/sub 2/ gas. Two phenomena, trenching and loading, were observed in the shape of etch profiles. Trenching refers to deeper etching at the side of an etch feature with respect to the middle of the feature. Loading is the reduction in etch depth that adjacent etched regions have on their respective etch profiles. These two phenomena could especially be recognized at locations where the substrate was etched through large mask openings (>200 /spl mu/m). A theory explaining these phenomena is developed, and the etching process is simulated in software. The results are compared to several etched samples with varying mask aperture size and etch depth. Good agreement was found between the simulated profiles and the actual measured etch profiles at the mean free path of XeF/sub 2/ etching pressures." @default.
- W2124940615 created "2016-06-24" @default.
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- W2124940615 date "2003-06-25" @default.
- W2124940615 modified "2023-09-24" @default.
- W2124940615 title "Deep etching of silicon with XeF/sub 2/ gas" @default.
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- W2124940615 doi "https://doi.org/10.1109/ccece.2002.1015269" @default.
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