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- W2124948169 abstract "We report the growth of high crystalline quality GaN-based light emitting diodes (LEDs) on Si (111) substrates with AlN/GaN superlattice interlayer for both stress and dislocation engineering. A focused study involved comparison of different interlayer structures including low-temperature AlN, medium-temperature AlN multilayers and AlN/GaN supperlattice for optimization of the LED performance. The results show that the AlN/GaN supperlattice interlayer is the most effective in reducing the residual tensile stress and improving the crystalline quality of GaN on Si. With the AlN/GaN superlattice interlayer, optical properties of the LEDs were enhanced and optical output power of unpackaged LED chips on Si substrates was improved by 24%." @default.
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- W2124948169 date "2013-05-01" @default.
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- W2124948169 title "Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers" @default.
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- W2124948169 doi "https://doi.org/10.1016/j.jcrysgro.2012.10.028" @default.
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