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- W2125187798 abstract "This paper reports the drift of Cu ions in various low-permittivity polymer dielectrics to identify Cu barrier requirements for future ULSI integration. Bias-temperature stressing was conducted on Cu-insulator-semiconductor capacitors to investigate Cu+ penetration into the polymers. Our study shows that Cu/sup +/ ions drift readily into poly(arylene ether) and fluorinated polyimide, but much more slowly into benzocyclobutene. A thin nitride cap layer can stop the drift. A physical model has been developed to explain the kinetics of Cu/sup +/ drift." @default.
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- W2125187798 date "2002-11-27" @default.
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- W2125187798 title "Copper drift in low-K polymer dielectrics for ULSI metallization" @default.
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- W2125187798 doi "https://doi.org/10.1109/vlsit.1998.689185" @default.
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