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• W2125283990 abstract "A new type of memory, paired FinFET charge trap memory is reported. It consists of two split silicon fins and insulator between them. Two channels are formed on the outer surface of silicon so doubled integration density can be achieved. We successfully fabricated paired FinFET SONOS devices. It shows good program and erase characteristics. Independent programming on each storage nodes is demonstrated. The circuit configuration for NAND flash application is also proposed" @default.
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• W2125283990 date "2006-10-24" @default.
• W2125283990 modified "2023-10-06" @default.
• W2125283990 title "Paired FinFET Charge Trap Flash Memory for Vertical High Density Storage" @default.
• W2125283990 cites W1539605875 @default.
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• W2125283990 doi "https://doi.org/10.1109/vlsit.2006.1705228" @default.
• W2125283990 hasPublicationYear "2006" @default.
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