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- W2125604633 abstract "Two different structures of junction field-effect transistors in 4H-SiC, with and without trenching effect in the channel region, have been fabricated and characterized. The devices formed with metal mask show a trenching profile (>similar to0.2 mum) after dry etch in the channel groove region and exhibited static induction transistor (SIT)-like characteristics in the sub-threshold region of I-V curves as the channel thickness decreases. The devices without trenching effect have been processed by using a wet-etched oxide mask resulting in a sloped dry-etch profile (theta=similar to30degrees) in the channel, and consequently showed well-saturated drain characteristics for all the channel thicknesses. The conduction mechanisms in these JFETs are examined by the potential profiles from two dimensional numerical simulations." @default.
- W2125604633 created "2016-06-24" @default.
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- W2125604633 date "2002-04-01" @default.
- W2125604633 modified "2023-10-03" @default.
- W2125604633 title "Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect Transistors" @default.
- W2125604633 doi "https://doi.org/10.4028/www.scientific.net/msf.389-393.1235" @default.
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