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- W2125646356 abstract "The AIGaN/GaN HEMTs have many advantages for high rrequel1c�' und high power applications because of its unique materia l properties. In this paper, AIGaN/GaN HEMT has been investigated through computer simulation including spontaneous and piezoelectric polarization charges. By self-consistentl y solving the Schrodinger-Pois son equations, the information of electron distribution, density of 2DEG and ele ctric field arc obtained. 111 addition, the electronic tunneling probabilil' of wz-GaN induced by strong interf1ce electric field is discussed. The simulation resull shows that the tunneling charge in GaN channel layer is an Important source of 2DEG besidethe unintentional donor impuritv in GaN channel layer and the ionized donor in AIGaN barrier layer. Moreover the ratio of tunnelillg charges to 2DEG increases with the impro'ement of AI composition." @default.
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- W2125646356 date "2004-01-01" @default.
- W2125646356 modified "2023-09-26" @default.
- W2125646356 title "Investigation on the Sources of 2DEG in AlxGal_xN/GaN HEMT*" @default.
- W2125646356 hasPublicationYear "2004" @default.
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