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- W2125783025 abstract "The point defect concentration in Te-rich CdTe and Hg1-xCdxTe annealed at various temperatures has been estimated from precision lattice parameters using a simple continuum inclusion model and compared with densities of electrically charged defects determined by high-temperature Hall and conductivity measurements. The nonstoichiometry is realized by cation vacancies. Dependent on the CdTe content, the ratio of total to charged defect concentrations varies between about unity for HgTe-rich composition and 75 for CdTe. Therefore, it is necessary to distinct between “electrical” and “chemical” stability regions. In Te-reichem CdTe und Hg1-xCdxTe wurden die durch Tempern bei verschiedenen Temperaturen cingestellten Punktdefektonzentrationen aus Präzionsgitterkonstanten mit Hilfe eines einfachen Kontinuums-Einschluß-Modells abgeschätzt und mit der Dichte geladener Defeckte, die durch Hochtemperatur-Hall- und -Leitfähigkeitsmessungen bestimmt wurde, verglichen. Die Nichtstöchiometrie wird durch Kationenleerstellen realisiert. In Abhängigkeit von CdTe-Gehalt variiert das Verhältnis der Konzentration der Gesamtzahl zu dem der geladenen Defekte zwischen annähernd eins für HgTe-reiche Zusammensetzung und 75 für CdTe. Es ist deshalb notwendig, zwischen „elektrischem”︁ und „chemischem”︁ Stabiliätsgebiet zu unterscheiden." @default.
- W2125783025 created "2016-06-24" @default.
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- W2125783025 date "1993-01-01" @default.
- W2125783025 modified "2023-09-27" @default.
- W2125783025 title "X-Ray Diffraction Studies on Point Defects in II–VI Compounds" @default.
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- W2125783025 doi "https://doi.org/10.1002/crat.2170280604" @default.
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