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• W2125979425 abstract "A detailed study of the impact of N/sub 2/ ion implantation (I/I) dose before gate oxide growth to hot carrier (HC) reliability of NMOSFETs is reported here, Improvements of more than 20/spl times/ in HC lifetime were achieved by the introduction of sufficiently high N/sub 2/ (I/I) doses. It was found that for NMOSFETs, the HC degradation correlates inversely to the initial interface state density introduced by the N/sub 2/ I/I process. This process-driven HC lifetime improvement does not require extensive post-metal anneals for HC lifetime improvements in advanced CMOS multilevel metal-dielectric processes." @default.
• W2125979425 created "2016-06-24" @default.
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• W2125979425 date "1999-12-01" @default.
• W2125979425 modified "2023-09-24" @default.
• W2125979425 title "Improvement in hot carrier lifetime as a function of N/sub 2/ ion implantation before gate oxide growth in deep submicron NMOS devices" @default.
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• W2125979425 doi "https://doi.org/10.1109/55.806098" @default.
• W2125979425 hasPublicationYear "1999" @default.
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