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- W2125991313 abstract "High-performance poly-Si thin-film transistors (TFTs) with 50-nm nanowire (NW) channels fabricated by integrating a simple spacer formation scheme and metal-induced-lateral-crystallization (MILC) technique are proposed. By using the sidewall spacer formation scheme, the NW channels with nanometer-scale feature sizes can be easily fabricated, exhibiting superior channel controllability through the triple-gate structure. In employing the MILC technique, the grain crystallinity of NW channels is significantly superior to that formed by the solid-phase-crystallization (SPC) technique. Therefore, the MILC NW TFT exhibits greatly improved electrical performances, including lower threshold voltage, steeper subthreshold swing, and higher field-effect mobility, as compared to those of the SPC NW TFT. Moreover, the superior threshold-voltage rolloff characteristics of MILC NW TFT are also demonstrated." @default.
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- W2125991313 date "2008-05-01" @default.
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- W2125991313 title "High-Performance Nanowire TFTs With Metal-Induced Lateral Crystallized Poly-Si Channels" @default.
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- W2125991313 doi "https://doi.org/10.1109/led.2008.920977" @default.
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