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• W2126159071 endingPage "1971" @default.
• W2126159071 startingPage "1965" @default.
• W2126159071 abstract "Flicker noise is the dominant noise source in silicon MOSFET's. Even though considerable amount of work has been done in investigating the noise mechanism, controversy still exists as to the noise origin. In this paper, a systematic study of flicker noise in CMOS transistors from twelve different fabricators is reported under various bias conditions corresponding to the gate voltage changing from subthreshold to strong inversion, and the drain voltage changing from linear to saturation regions of operation. The measurement temperature was varied from room temperature down to 5 K. Experimental results consistently suggest that 1/f noise in n-channel devices is dominated by carrier-density fluctuation while in p-channel devices the noise is mainly due to mobility fluctuation.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
• W2126159071 created "2016-06-24" @default.
• W2126159071 creator A5002012355 @default.
• W2126159071 creator A5028638391 @default.
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• W2126159071 date "1994-01-01" @default.
• W2126159071 modified "2023-10-17" @default.
• W2126159071 title "Flicker noise in CMOS transistors from subthreshold to strong inversion at various temperatures" @default.
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• W2126159071 doi "https://doi.org/10.1109/16.333812" @default.
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