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• W2126164003 abstract "Results of a two-dimensional finite-element simulation of a GaAs MESFET are presented. The simulation is used to determine the drain current and transconductance as well as the two-dimensional voltage, electron density, and electric-field distributions. It is shown that placement of a compensated doping region in the high electric-field region between gate and drain increases the drain current and transconductance by reducing the velocity-saturation effect. The transconductance and drain conductance of the MESFET in the saturation region of devices having different channel heights are compared with previous analysis." @default.
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• W2126164003 date "1976-09-01" @default.
• W2126164003 modified "2023-09-29" @default.
• W2126164003 title "Finite-element simulation of GaAs MESFET's with lateral doping profiles and submicron gates" @default.
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• W2126164003 doi "https://doi.org/10.1109/t-ed.1976.18533" @default.
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