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• W2126512705 abstract "For the first time, we integrated 1.9GPa eXtra-strained silicon on insulator (XsSOI) substrates in FDSOI n and pMOSFETs with gate length (L <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> ) and width (W) down to 25nm. Due to the high stress levels, significant I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> -I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>OFF</sub> improvements were obtained not only for nMOS but also for pMOS. We compared those results with the performance of devices strained by Contact Etch Stop Layer (CESL), for different device orientations (<110> or <100>) and feature sizes (L <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> , W). We demonstrate that, similarly to XsSOI, a single tensile CESL can improve both n and pMOS performance, leading to I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON,n</sub> =700 muA/mum and I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON,p</sub> =430 μA/μm at I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>OFF</sub> =140 pA/μm, this for L <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> <35nm, W=50nm and V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>DD</sub> =1V along the <100> direction." @default.
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• W2126512705 date "2007-06-01" @default.
• W2126512705 modified "2023-10-16" @default.
• W2126512705 title "Impact of Mobility Boosters (XsSOI, CESL, TiN gate) on the Performance of &#x226A;100&#x226B; or &#x226A;110&#x226B; oriented FDSOI cMOSFETs for the 32nm Node" @default.
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• W2126512705 doi "https://doi.org/10.1109/vlsit.2007.4339723" @default.
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