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• W2126762436 abstract "We investigate proton damage in SOI CMOS devices on UNIBOND using a variety of lateral bipolar operational modes. We show that the impact of interface states and oxide charge can be more clearly observed using lateral bipolar action than by using normal FET operational characteristics. We also investigate the radiation-induced interface states at the Si/buried oxide interface and oxide charges in the buried oxide of this SOI CMOS technology using the DCIV method." @default.
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• W2126762436 date "2003-12-01" @default.
• W2126762436 modified "2023-10-16" @default.
• W2126762436 title "Probing proton damage in SOI CMOS technology by using lateral bipolar action" @default.
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• W2126762436 doi "https://doi.org/10.1109/tns.2003.822088" @default.
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