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- W2126822333 endingPage "209" @default.
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- W2126822333 abstract "A major use of surface analysis instruments concerns composition depth profiling. In many instances poor depth resolution is obtained, one cause of which is poor ion beam alignment and uniformity. To enable instrument users to optimise instrument settings and know (1) the instrument contribution to depth resolution and (2) the ion etch rate, tantalum pentoxide reference materials have been developed with thicknesses of 30 nm and 100 nm and interface widths, measured by AES, of 1.5 and 1.7 nm respectively. The effects of argon ion beam energy, electron beam current density, sputtering geometry and gas purity effects on etch rate and interface width are measured and interpreted in terms of basic parameters, showing that the material is a well-behaved model system that is robust and easily used. The precise shape of the interface and preferential sputtering effects are also analysed." @default.
- W2126822333 created "2016-06-24" @default.
- W2126822333 creator A5013068173 @default.
- W2126822333 creator A5079382386 @default.
- W2126822333 date "1983-10-01" @default.
- W2126822333 modified "2023-09-26" @default.
- W2126822333 title "Characterization of a high depth-resolution tantalum pentoxide sputter profiling reference material" @default.
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- W2126822333 doi "https://doi.org/10.1002/sia.740050506" @default.
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