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• W2127003688 abstract "In order to improve the crystal quality of GaN-based light emitting devices, photoluminescence (PL) characterization of below-gap states in plasma assisted MBE-grown GaN/AlGaN quantum well (QW) structures has been done by utilizing a below-gap excitation (BGE) light in addition to an above-gap excitation light. The decrease of the band-edge PL intensity due to the addition of the BGE of 1.17 eV indicates the presence of an energy-matched below-gap state in the two-wavelength excited PL. In continuation to our previous efficiency improvement by applying modulation-doping to GaAs/AlGaAs QW's, we focused on several undoped and Si-doped GaN/AlGaN QW's. Experimental results showed that Si modulation-doping reduces the density of below-gap states in the QW region, hence it is promising for increasing internal quantum efficiency of GaN-based QW's." @default.
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• W2127003688 date "2004-07-01" @default.
• W2127003688 modified "2023-10-03" @default.
• W2127003688 title "Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well" @default.
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• W2127003688 doi "https://doi.org/10.1051/epjap:2004128" @default.
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