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• W2127202835 endingPage "332" @default.
• W2127202835 startingPage "325" @default.
• W2127202835 abstract "A titanium tetrachloride (TiCl <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> ) soak, which is a TiCl <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> gas flow without any radio frequency power, was used prior to the use of plasma-enhanced chemical vapor deposition (PECVD) using TiCl <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> at 450°C to form titanium and titanium nitride (Ti/TiN) as the contact-barrier films between nickel silicide (NiSi) and a tungsten plug. We found a 15% reduction in the contact resistance and its uniformity in the wafer was also improved compared with those without the TiCl <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> soak. The Ti/NiSi interface and the NiSi surface were characterized by using transmission electron microscopy along with electron energy loss spectroscopy, X-ray fluorescence, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy, where the selective formation of a pure nickel-titanium (NiTi) alloy on NiSi using a TiCl <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> soak was revealed. The results indicate that the TiCl <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> gas selectively decomposed on the NiSi surface, accompanied by the oxide removal on the NiSi and the formation of sub-nanometer-thick NiTi, although it does not kinetically decompose. The reduced contact-resistance regardless of the increase in the total thickness of the barriers was attributed to the improvement of the integrity at the NiTi/NiSi interface compared with the conventional scheme prepared by using chemical dry-cleaning and TiCl <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> PECVD." @default.
• W2127202835 created "2016-06-24" @default.
• W2127202835 creator A5018508633 @default.
• W2127202835 creator A5031142092 @default.
• W2127202835 creator A5038691012 @default.
• W2127202835 creator A5078030972 @default.
• W2127202835 date "2011-05-01" @default.
• W2127202835 modified "2023-09-25" @default.
• W2127202835 title "${rm TiCl}_{4}$ Soak on NiSi: Selective Formation of Pure Sub-Nanometer NiTi to Reduce Contact Resistance" @default.
• W2127202835 cites W1973405617 @default.
• W2127202835 cites W1974623766 @default.
• W2127202835 cites W1977089215 @default.
• W2127202835 cites W1987568755 @default.
• W2127202835 cites W2007492402 @default.
• W2127202835 cites W2047837791 @default.
• W2127202835 cites W2050904462 @default.
• W2127202835 cites W2052300037 @default.
• W2127202835 cites W2062959197 @default.
• W2127202835 cites W2077143414 @default.
• W2127202835 cites W2097320401 @default.
• W2127202835 cites W2106262963 @default.
• W2127202835 cites W2138376165 @default.
• W2127202835 doi "https://doi.org/10.1109/tsm.2010.2099673" @default.
• W2127202835 hasPublicationYear "2011" @default.
• W2127202835 type Work @default.
• W2127202835 sameAs 2127202835 @default.
• W2127202835 citedByCount "11" @default.
• W2127202835 countsByYear W21272028352013 @default.
• W2127202835 countsByYear W21272028352015 @default.
• W2127202835 countsByYear W21272028352016 @default.
• W2127202835 countsByYear W21272028352017 @default.
• W2127202835 countsByYear W21272028352019 @default.
• W2127202835 crossrefType "journal-article" @default.
• W2127202835 hasAuthorship W2127202835A5018508633 @default.
• W2127202835 hasAuthorship W2127202835A5031142092 @default.
• W2127202835 hasAuthorship W2127202835A5038691012 @default.
• W2127202835 hasAuthorship W2127202835A5078030972 @default.
• W2127202835 hasConcept C113196181 @default.
• W2127202835 hasConcept C127413603 @default.
• W2127202835 hasConcept C13965031 @default.
• W2127202835 hasConcept C178790620 @default.
• W2127202835 hasConcept C185592680 @default.
• W2127202835 hasConcept C191897082 @default.
• W2127202835 hasConcept C192562407 @default.
• W2127202835 hasConcept C42360764 @default.
• W2127202835 hasConcept C506065880 @default.
• W2127202835 hasConcept C525849907 @default.
• W2127202835 hasConceptScore W2127202835C113196181 @default.
• W2127202835 hasConceptScore W2127202835C127413603 @default.
• W2127202835 hasConceptScore W2127202835C13965031 @default.
• W2127202835 hasConceptScore W2127202835C178790620 @default.
• W2127202835 hasConceptScore W2127202835C185592680 @default.
• W2127202835 hasConceptScore W2127202835C191897082 @default.
• W2127202835 hasConceptScore W2127202835C192562407 @default.
• W2127202835 hasConceptScore W2127202835C42360764 @default.
• W2127202835 hasConceptScore W2127202835C506065880 @default.
• W2127202835 hasConceptScore W2127202835C525849907 @default.
• W2127202835 hasIssue "2" @default.
• W2127202835 hasLocation W21272028351 @default.
• W2127202835 hasOpenAccess W2127202835 @default.
• W2127202835 hasPrimaryLocation W21272028351 @default.
• W2127202835 hasRelatedWork W1937723476 @default.
• W2127202835 hasRelatedWork W1991793670 @default.
• W2127202835 hasRelatedWork W2042093121 @default.
• W2127202835 hasRelatedWork W2058827976 @default.
• W2127202835 hasRelatedWork W2061915335 @default.
• W2127202835 hasRelatedWork W2292872179 @default.
• W2127202835 hasRelatedWork W2363148876 @default.
• W2127202835 hasRelatedWork W2370242288 @default.
• W2127202835 hasRelatedWork W2883892660 @default.
• W2127202835 hasRelatedWork W3201544005 @default.
• W2127202835 hasVolume "24" @default.
• W2127202835 isParatext "false" @default.
• W2127202835 isRetracted "false" @default.
• W2127202835 magId "2127202835" @default.
• W2127202835 workType "article" @default.