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• W2127297515 abstract "Combinatorial composition films of BaxSr1-xTiO3 were grown on two-inch p-Si by pulsed laser deposition. Large areas of six different combinatorial composition films were grown on the same wafer using three primary target materials. Consequently, the deposition of Ba0.5Sr0.5TiO3 films was obtained from targets BaTiO3 and SrTiO3, the deposition of Ba0.3Sr0.7TiO3 films was obtained from targets SrTiO3 and Ba0.6Sr0.4TiO3, and the Ba0.8Sr0.2TiO3 film was obtained from targets Ba0.6Sr0.4TiO3 and BaTiO3. The results indicate that the deposited materials are perovskite structures with high dielectric constants ranging from 49.4 to 193.2 and leakage current densities as low as 1.25 × 10−7 A/cm2 at −2V." @default.
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• W2127297515 date "2013-04-12" @default.
• W2127297515 modified "2023-09-23" @default.
• W2127297515 title "Combinatorial Composition Films and Dielectric Properties of BaxSr1-xTiO3Grown on Two-Inchp-Si using PLD Process" @default.
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• W2127297515 doi "https://doi.org/10.1111/ijac.12096" @default.
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