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- W2127486912 abstract "This letter reports the design and fabrication of 4H-SiC bipolar junction transistors with both high voltage (>1kV) and high dc current gain (/spl beta/=32) at a collector current level of I/sub c/=3.83A (J/sub c/=319 A/cm/sup 2/). An Al-free base ohmic contact has been used which, when compared with BJTs fabricated with Al-based base contact, shows clearly improved blocking voltage. A specific on-resistance of 17 m/spl Omega//spl middot/cm/sup 2/ has been achieved for collector current densities up to 289 A/cm/sup 2/." @default.
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- W2127486912 date "2003-11-01" @default.
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- W2127486912 title "High voltage (>1kV) and high current gain (32) 4H-SiC power BJTs using Al-free ohmic contact to the base" @default.
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- W2127486912 doi "https://doi.org/10.1109/led.2003.819271" @default.
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