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• W2127679905 abstract "In this brief, an equivalent junction method is proposed to study three-dimensional (3-D) effect of the lateral curvature on curved-abrupt junctions. Analytical expressions including 3-D effect are derived to calculate the breakdown voltage, peak electrical field, and maximum depletion layer width of curved-abrupt junctions. The breakdown voltages calculated from the new analytic expression have been verified by the numerical simulation and experimental data. The equivalent junction model provides a simple means for device engineers to estimate the required substrate doping concentration, lateral curvature, junction depth and depletion width of a planar p-n junction with a specific breakdown voltage." @default.
• W2127679905 created "2016-06-24" @default.
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• W2127679905 date "2002-07-01" @default.
• W2127679905 modified "2023-10-16" @default.
• W2127679905 title "Equivalent junction method to predict 3-D effect of curved-abrupt p-n junctions" @default.
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• W2127679905 doi "https://doi.org/10.1109/ted.2002.1013296" @default.
• W2127679905 hasPublicationYear "2002" @default.
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