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• W2127912299 abstract "Abstract In this work, for the first time, the electrical and thermal characteristics of strained Si/SiGe nanoscale n type metal–oxide–silicon field-effect transistors (MOSFETs) with silicon-on-aluminum nitride (SOAN) substrate are investigated by ISE TCAD. This novel structure is named as SGSOAN nMOSFET. A comparative study of self-heating effect (SHE) of nMOSFETs fabricated on SGOI and SGSOAN are presented in this paper. Numerical study results show that this novel SGSOAN structure can greatly eliminate excessive self-heating in devices, which gives a more promising application for SGOI to work at high temperature." @default.
• W2127912299 created "2016-06-24" @default.
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• W2127912299 date "2010-12-01" @default.
• W2127912299 modified "2023-09-25" @default.
• W2127912299 title "A comparative study of self-heating effect of nMOSFETs fabricated on SGOI and SGSOAN substrates" @default.
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• W2127912299 doi "https://doi.org/10.1016/j.microrel.2010.05.013" @default.
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