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• W2128120676 abstract "<para xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> The substrate resistance of 45 nm CMOS devices shows a strong dependence on the distance between the device edge and the substrate contact ring, as well as on the number of sides that the surrounding ring contacts the substrate. We find that the unilateral gain is impacted by the substrate resistance <formula formulatype=inline><tex Notation=TeX>$({rm R}_{rm sx})$</tex></formula> through the gate-body capacitance feedback path at low to medium frequencies (<formula formulatype=inline><tex Notation=TeX>$<$</tex></formula>20 GHz). At mm-wave frequencies, the unilateral power gain is affected by <formula formulatype=inline> <tex Notation=TeX>${rm R}_{rm sx}$</tex></formula> through the drain-body capacitance pole, and the unilateral power gain deviates from the ideal <formula formulatype=inline><tex Notation=TeX>$-$</tex></formula>20 dB/dec slope. Within the range of designs that have been studied, the impact of substrate resistance on <formula formulatype=inline><tex Notation=TeX>${rm f}_{rm T}$</tex></formula>, maximum available gain, high frequency noise and power characteristics of the devices is minimal. </para>" @default.
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• W2128120676 date "2010-05-01" @default.
• W2128120676 modified "2023-10-07" @default.
• W2128120676 title "Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices" @default.
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• W2128120676 doi "https://doi.org/10.1109/jssc.2010.2041407" @default.
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