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• W2128175041 abstract "Abstract In addition to their usefulness in optoelectronic applications, GaN‐based devices also have excellent electronic properties such as high critical breakdown fields, high saturation velocity, and good thermal conductivity. Many laboratories around the world have demonstrated microwave power performance for GaN devices that are far superior to the performance of other solid‐state device technologies. The GaN‐based high‐electron‐mobility transistor (HEMT) is considered an ideal candidate for highpower and high‐temperature RF/microwave applications." @default.
• W2128175041 created "2016-06-24" @default.
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• W2128175041 date "2005-04-15" @default.
• W2128175041 modified "2023-09-24" @default.
• W2128175041 title "Gallium Nitride for Electronics" @default.
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• W2128175041 doi "https://doi.org/10.1002/0471654507.eme144" @default.
• W2128175041 hasPublicationYear "2005" @default.
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