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W2128804828 abstract "For the first time, we demonstrate stressor contact etch stop liner (sCESL) modulation of parasitics/external resistance in nonplanar devices. We report 17% saturation drive current enhancement in underlap doped cMOS FinFETs attributed to simultaneous lowering of RS/D via biaxial S/D stress and µ o increase via effective uniaxial channel stress. Our observations imply that biaxial strain engineering for reduction of R S/D offers a significant opportunity to realize non-planar CMOSFET performance metrics for the 22nm node and beyond." @default.
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W2128804828 date "2010-01-01" @default.
W2128804828 modified "2023-09-27" @default.
W2128804828 title "Strain engineering in nanoscale CMOS FinFETs and methods to optimize R<inf>S/D</inf>" @default.
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W2128804828 doi "https://doi.org/10.1109/vtsa.2010.5488905" @default.
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