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- W2129128625 abstract "The progressive leakage current growth in electrically stressed Hf <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> ON/SiON gate stacks is analyzed within the framework of the physics of mesoscopic conducting systems. The breakdown spot is modeled as a nanoconstriction whose effective cross-section area increases as the degradation proceeds. We show that, after eliminating the gate tunneling current component, the post-breakdown conductance exhibits plateaus close to the quantum unit 2e <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /h, where e is the electron charge and h the Planck's constant, as it is expected for atomic-sized contacts." @default.
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- W2129128625 date "2008-05-01" @default.
- W2129128625 modified "2023-10-03" @default.
- W2129128625 title "Progressive breakdown dynamics in HfSiON/SiON gate stacks" @default.
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- W2129128625 doi "https://doi.org/10.1109/icmel.2008.4559338" @default.
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