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• W2129289712 abstract "In this study, we have grown 380-nm ultraviolet light-emitting diodes (UV-LEDs) based on InGaN/AlInGaN multiple quantum well (MQW) structures on free-standing GaN (FS-GaN) substrate by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD), and investigated the relationship between carrier localization degree and FS-GaN. The micro-Raman shift peak mapping image shows low standard deviation (STD), indicating that the UV-LED epi-wafer of low curvature and MQWs of weak quantum-confined Stark effect (QCSE) were grown. High-resolution X-ray diffraction (HRXRD) analyses demonstrated high-order satellite peaks and clear fringes between them for the UV-LEDs grown on the FS-GaN substrate, from which the interface roughness (IRN) was estimated. The temperature-dependent photoluminescence (PL) measurement confirmed that the UV-LEDs grown on the FS-GaN substrate exhibited better carrier confinement. Besides, the high-resolution transmission electron microscopy (HRTEM) and energy-dispersive spectrometer (EDS) mapping images verified that the UV-LEDs on FS-GaN have fairly uniform distribution of indium and more ordered InGaN/AlInGaN MQW structure. Clearly, the FS-GaN can not only improve the light output power but also reduce the efficiency droop phenomenon at high injection current. Based on the results mentioned above, the FS-GaN can offer UV-LEDs based on InGaN/AlInGaN MQW structures with benefits, such as high crystal quality and small carrier localization degree, compared with the UV-LEDs on sapphire." @default.
• W2129289712 created "2016-06-24" @default.
• W2129289712 creator A5009474669 @default.
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• W2129289712 date "2014-12-01" @default.
• W2129289712 modified "2023-10-18" @default.
• W2129289712 title "The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes" @default.
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• W2129289712 doi "https://doi.org/10.1186/1556-276x-9-675" @default.
• W2129289712 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/4494039" @default.
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• W2129289712 hasPublicationYear "2014" @default.
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