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- W2129394519 abstract "Metal‐semiconductor contacts are essentially of two kinds : ohmic contacts and Schottky barriers. The physics governing the formation of metalsemiconductor Schottky barriers–which are the basis of most electronic devices–and ways of tuning their height are reviewed, concentrating on the theory. It is shown that tuning can be achieved by modifying the interface geometry, by modifying the surface dangling bonds, or, in the case of heterojunction interfaces, by the addition of an interlayer. Directions for (experimental) future research are suggested." @default.
- W2129394519 created "2016-06-24" @default.
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- W2129394519 date "1994-07-01" @default.
- W2129394519 modified "2023-10-18" @default.
- W2129394519 title "Tuning Schottky Barriers by atomic layer control at metal?semiconductor interfaces" @default.
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- W2129394519 doi "https://doi.org/10.1002/adma.19940060704" @default.
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