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- W2129609871 abstract "Approaches to achieve low resistivity ohmic contacts to GaN with planar and abrupt interfaces are discussed. Three types of thermally stable metallizations were studied: Ti/TiN for n-GaN, Ni/Si for p- and n-GaN, and ZrN/ZrB/sub 2/ for p-GaN. Although all these systems enable formation of ohmic contacts, it is suggested that the underlying mechanism, as investigated by a number of analytical methods, is different in each case." @default.
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- W2129609871 date "2005-08-25" @default.
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- W2129609871 title "Issues in developing ohmic contacts to GaN" @default.
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- W2129609871 doi "https://doi.org/10.1109/commad.2000.1022945" @default.
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