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- W2129623651 abstract "Dry etching is a very important process in integrated circuit manufacture. Perfect results of etching a 154 nm trench in silicon and a 138 nm trench in silicon dioxide by a pagoda-shape ICP reactor are reported. A detail study of etching characteristics as function of gas composition, flow rate, RF power, pressure and self-bias voltage, is described." @default.
- W2129623651 created "2016-06-24" @default.
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- W2129623651 date "2002-11-13" @default.
- W2129623651 modified "2023-09-22" @default.
- W2129623651 title "ICP dry etching for deep sub-micrometer vertical trench in Si and SiO/sub 2/" @default.
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- W2129623651 doi "https://doi.org/10.1109/icsict.2001.981516" @default.
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