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• W2129753640 endingPage "342" @default.
• W2129753640 startingPage "341" @default.
• W2129753640 abstract "Capacitors with ultra-thin (6.0-12.0 nm) CVD Ta/sub 2/O/sub 5/ film were fabricated on lightly doped Si substrates and their leakage current (I/sub g/-V/sub g/) and capacitance (C-V) characteristics were studied. For the first time, samples with stack equivalent oxide thickness around 2.0 nm were compared with ultra-thin silicon dioxide and silicon oxynitride. The Ta/sub 2/O/sub 5/ samples showed remarkably lower leakage current, which not only verified the advantages of ultra-thin Ta/sub 2/O/sub 5/ as dielectrics for high density DRAM's, but also suggested the possibility of its application as the gate dielectric material in MOSFET's." @default.
• W2129753640 created "2016-06-24" @default.
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• W2129753640 date "1998-09-01" @default.
• W2129753640 modified "2023-10-16" @default.
• W2129753640 title "Leakage current comparison between ultra-thin Ta₂O₅ films and conventional gate dielectrics" @default.
• W2129753640 cites W1507856417 @default.
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• W2129753640 doi "https://doi.org/10.1109/55.709635" @default.
• W2129753640 hasPublicationYear "1998" @default.
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