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• W2130159633 abstract "We proposed a method, i.e., stress-induced in situ epitaxial lateral overgrowth (ELO), for growing high-quality GaN heteroepilayers, and demonstrated its feasibility using both theory and experiment. Theoretical analysis by finite element simulation indicated that at a proper lattice mismatch, GaN islands formed during initial growth, continued to grow up to a stable state and finally coalesced into a film. To evaluate the effectiveness of the theoretical analysis, GaN films were grown on AlN/sapphire and GaN/sapphire templates. The experimental results showed that the stress at the interface between AlN and GaN initially caused separate GaN islands to form; subsequently, new islands stopped growing, and the islands displayed lateral growth until they coalesced into a film; however, GaN grown on GaN/sapphire always showed layer-by-layer growth, from the initial stage through to the final stage of growth. Therefore, the experimental results are consistent with the theoretical analysis, and stress-induced in situ ELO is a promising method for growing high-quality GaN films on suitable lattice-mismatched substrates, which is effective not only for growing GaN, but also for other lattice-mismatched epitaxial growth." @default.
• W2130159633 created "2016-06-24" @default.
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• W2130159633 date "2014-06-16" @default.
• W2130159633 modified "2023-09-26" @default.
• W2130159633 title "Stress-induced in situ epitaxial lateral overgrowth of high-quality GaN" @default.
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• W2130159633 doi "https://doi.org/10.1039/c4ce01003e" @default.
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