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• W2130370255 abstract "Magnetic tunnel junctions (MTJs) consisting of CoFe and NiFe as ferromagnetic electrodes and MgO as insulating barrier fabricated through in situ shadow masking employing ion beam sputtering are studied for their tunneling magnetoresistance (TMR) and temperature dependence of the tunneling conductance behavior. The tunneling characteristics of these MTJs exhibited barrier height of 0.7 eV and width of 3.3 nm. These MTJs possessed ∼12% TMR at 60 K. The temperature dependence of conductance behavior of these junctions have revealed finite contributions from inelastic tunneling through the barrier via hopping conduction via present localized states which arise due to the presence of ionic interstitial defects in the MgO oxide barrier. The fitting of the data reveals that thirteenth order of hopping conduction is operative through MgO barrier." @default.
• W2130370255 created "2016-06-24" @default.
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• W2130370255 date "2012-11-01" @default.
• W2130370255 modified "2023-10-18" @default.
• W2130370255 title "Tunneling behavior in ion-assist ion-beam sputtered CoFe/MgO/NiFe magnetic tunnel junctions" @default.
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• W2130370255 doi "https://doi.org/10.1016/j.materresbull.2012.06.020" @default.
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