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- W2130396894 abstract "It is the common sense, that dislocations in crystalline silicon wafers are originated during crystallization. In this paper we show that there an be a further rise of dislocation density during diffusion processing. We found this result by numerical simulations and production near experiments, exemplary for tri-crystal wafers. We performed temperature measurements during the loading stage into a horizontal tube diffusion furnace and found temperature differences up to 150/spl deg/C between wafers edge and center. This temperature difference induces thermal stress, which can activate dislocation multiplication. We calculate this multiplication with our simulation tools and estimate a rise in dislocation density from 1.2/spl times/10/sup 5/ cm/sup -2/, originated from crystallization, up to 1.0/spl times/10/sup 7/ cm/sup -2/ generated during the diffusion process. Additionally, we drive experiments in diffusion furnaces under production near conditions to validate the simulations. We found a remarkable rise of dislocation density at process temperatures of about 1000/spl deg/C. These experimental results are in good agreement with our simulations. In summary, our work gives a strong advice to solar cell industry to investigate the microstructure of their wafers before and after diffusion processing. Especially, if those processes are driven at 1000/spl deg/C or higher. A rise of dislocation density has to be excluded in any case to achieve a high solar cell performance." @default.
- W2130396894 created "2016-06-24" @default.
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- W2130396894 date "2003-05-18" @default.
- W2130396894 modified "2023-09-23" @default.
- W2130396894 title "Rise of dislocation density in crystalline silicon wafers during diffusion processing" @default.
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