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• W2130432834 abstract "We have developed a silane-free atmospheric-pressure plasma Si deposition process and investigated the properties of the deposited films by fabricating strain gauge type pressure sensors for the first time. The Si deposition process, which is known as plasma-enhanced chemical transport, utilizes the temperature difference between the solid Si source and the substrate in atmospheric hydrogen plasma. The Si films were deposited at a low temperature of 300 °C at 700 Torr. The Si films were composed of poly-crystals. The gauge factor became approximately 10. The bridge voltage of the pressure sensor was found to be proportional to the pressure. The Si films were deemed appropriate for use as MEMS devices." @default.
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• W2130432834 date "2011-01-01" @default.
• W2130432834 modified "2023-10-03" @default.
• W2130432834 title "Silane-free atmospheric-plasma silicon deposition for MEMS devices" @default.
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• W2130432834 doi "https://doi.org/10.1109/memsys.2011.5734426" @default.
• W2130432834 hasPublicationYear "2011" @default.
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