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- W2130458700 abstract "In this paper, the commercial 0.5-μm AlGaAs/InGaAs/GaAs pseudo-morphic high electron mobility transistors were subjected to both high-drain voltage and high-temperature stresses for investigating reliability issues. The results reveal that the stressinduced trapping phenomena near two-dimensional electron gas layer should be responsible for the different drain current collapses. The decay level of the DC and the small-signal characteristics increases with the stress voltage and/or the operation temperature. The self-consistent model was established through the deembedded and the non-linear fitting processes, which can be used to estimate the DC and RF small-signal characteristics degradation under high-drain voltage and high-temperature stress." @default.
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- W2130458700 date "2019-12-16" @default.
- W2130458700 modified "2023-09-24" @default.
- W2130458700 title "The Reliability Study and Device Modeling for p-HEMT Microwave Power Transistors" @default.
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- W2130458700 doi "https://doi.org/10.1149/1.3629965" @default.
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