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- W2130776668 abstract "The charge-trapping characteristics of BaTiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> film with and without Zr incorporation were investigated based on Al/ Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> /BaTiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> /SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /Si capacitors. Compared with the device without Zr incorporation, the one with Zr incorporation showed a similar memory window (8.3 V at ±12 V for 1 s), but higher program speed at low gate voltage (3.2 V at 100 μs + 6 V) and better endurance and data retention (charge loss of 6.4% at 150°C for 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sup> ), due to the Zr-doped BaTiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> exhibiting higher charge-trapping efficiency and higher density of traps with deeper energy levels." @default.
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- W2130776668 date "2013-04-01" @default.
- W2130776668 modified "2023-10-17" @default.
- W2130776668 title "Improved Charge-Trapping Characteristics of $ hbox{BaTiO}_{3}$ by Zr Doping for Nonvolatile Memory Applications" @default.
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