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- W2130797638 abstract "High-voltage PMOS(HV-PMOS) with field-oxide as gate dielectrics for scan driver chip of plasma display panels (PDP) is disclosed in the paper, which is based on the epitaxial Bipolar-CMOS-DMOS (BCD) process. The key considerations during the design are proposed here, and abundance simulation and process regulation is done on the structure and parameter optimization, by the testing on the HV-PMOS parameter and chip parameter, the results is favorable for 170V PDP scan driver chip, which contributes to the competitive cost efficiency." @default.
- W2130797638 created "2016-06-24" @default.
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- W2130797638 date "2008-10-01" @default.
- W2130797638 modified "2023-10-18" @default.
- W2130797638 title "Thick field-oxide high-voltage PMOS in BCD technology for PDP scan driver IC" @default.
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- W2130797638 doi "https://doi.org/10.1109/icsict.2008.4734502" @default.
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