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• W2130876074 startingPage "1649" @default.
• W2130876074 abstract "Molecular beam epitaxy is the most widely currently used technique for the growth of semiconductor microstructures. Multilayers with thicknesses and smoothness controlled near the monolayer level are being produced, including, recently, quantum wells with special shapes, quantum wells to which electric fields may be applied, new structures with enhanced carrier mobilities, structures for tunneling injection of carriers, and possible structures for achievement of quantum wires and dots. New crystal systems and new growth techniques are extending the range of accessible microstructures." @default.
• W2130876074 created "2016-06-24" @default.
• W2130876074 creator A5037450921 @default.
• W2130876074 date "1986-09-01" @default.
• W2130876074 modified "2023-10-13" @default.
• W2130876074 title "Growth of microstructures by molecular beam epitaxy" @default.
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• W2130876074 doi "https://doi.org/10.1109/jqe.1986.1073165" @default.
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