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• W2130944032 endingPage "115016" @default.
• W2130944032 startingPage "115016" @default.
• W2130944032 abstract "In this work, a metal-oxide-semiconductor capacitor with zirconium oxide (ZrO2) gate dielectric was fabricated by an atomic layer deposition (ALD) technique and the leakage current characteristics under negative bias were studied. From the result of current–voltage curves there are two possible conduction mechanisms to explain the leakage current in the ZrO2 thin film. The dominant mechanism is the space charge limited conduction in the high-electric field region (1.5–5.0 MV cm−1) while the trap-assisted tunneling due to the existence of traps is prevailed in the low-electric field region (0.8–1.5 MV cm−1). Conduction caused by the trap-assisted tunneling is found from the experimental results of a weak temperature dependence of current, and the trap barrier height is obtained. The space charge limited conduction is evidenced, for different temperatures, by Child's law dependence of current density versus voltage. Child's law dependence can be explained by considering a single discrete trapping level and we can obtain the activation energy of 0.22 eV." @default.
• W2130944032 created "2016-06-24" @default.
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• W2130944032 date "2009-10-20" @default.
• W2130944032 modified "2023-09-30" @default.
• W2130944032 title "Conduction mechanism of leakage current due to the traps in ZrO₂thin film" @default.
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• W2130944032 doi "https://doi.org/10.1088/0268-1242/24/11/115016" @default.
• W2130944032 hasPublicationYear "2009" @default.
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