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• W2131027596 abstract "The thermal stability of nanometric lanthanum aluminum oxynitride films on silicon was investigated in vacuum and oxygen. Isotopic enrichment of the films with and of the annealing atmosphere with combined with nuclear reaction analysis and Rutherford backscattering spectrometry provides direct evidence of atomic transport starting at . Oxygen exchange and nitrogen replacement are identified. Interfacial silicon oxide growth takes place as the interfacial N concentration falls below . Complementary X-ray photoelectron spectroscopy shows changes in chemical bonding as a function of annealing temperature and ambient." @default.
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• W2131027596 date "2007-01-01" @default.
• W2131027596 modified "2023-10-14" @default.
• W2131027596 title "Thermally Induced Atomic Transport in Nanometric LaAlON Films on Si" @default.
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• W2131027596 doi "https://doi.org/10.1149/1.2756289" @default.
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