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- W2131375741 abstract "The benefits of using high-resistivity substrates for RF CMOS applications are experimentally quantified. The quality factors of spiral inductors with a patterned ground shield, varactors, and transistors have been measured on both p/sup +/ (with epi) and p/sup -/ substrates, and in each case, Q is higher on p/sup $/substrates. A 5.35-GHz VCO on a p-substrate has an 8 dB lower phase noise than that on a p/sup +/ substrate, while a 7-GHz LNA on a p/sup -/ substrate has a 6 dB higher gain and /spl sim/2.5 dB lower noise figure than that on a p/sup +/ substrate." @default.
- W2131375741 created "2016-06-24" @default.
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- W2131375741 date "2002-11-07" @default.
- W2131375741 modified "2023-09-23" @default.
- W2131375741 title "The effects of substrate resistivity on RF component and circuit performance" @default.
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- W2131375741 doi "https://doi.org/10.1109/iitc.2000.854313" @default.
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