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• W2131391886 abstract "A low-temperature fabrication of Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> N/GaN MISHEMTs on a 200-mm GaN-on-Si substrate using a common metal stack (Ti/Al/NiV) for concurrent source, drain, and gate formation is demonstrated. An ohmic contact resistance of 0.8 Q-mm and a specific contact resistivity of 6×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-6</sup> Q-cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> are achieved at an annealing temperature of 500 °C. The fabricated MISHEMTs have excellent electrical characteristics: an I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> /I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>OFF</sub> ratio of nine decades (due to subnanoampere OFF-state leakage current up to a -15 V gate bias), and a subthreshold swing of 80 mV/decade (by virtue of a relatively low Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.23</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.77</sub> N/GaN interface-trap density on the order of 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>11</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-2</sup> eV <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> ). The demonstrated approach is thus a promising alternative toward the gold-free GaN-on-Si integration." @default.
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• W2131391886 date "2015-12-01" @default.
• W2131391886 modified "2023-09-23" @default.
• W2131391886 title "Al$x$ Ga1–xN/GaN MISHEMTs With a Common Gold-Free Metal-Stack for Source/Drain/Gate" @default.
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• W2131391886 doi "https://doi.org/10.1109/led.2015.2491362" @default.
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