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• W2131419097 abstract "The photochemical properties of a diazoquinone/novolak resist system were studied over a wide range of material and processing parameters in order to determine the optimum values for a given application. These resists are representative of the commercial positive-working photoresists being used for high-resolution lithography. The solubility of the resist in an alkaline developer depends on exposure E as <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>Delta g^{-1} = [g_{0}(E/E_{e})^{m}]^{-1} + [Delta g_{infin}]^{-1}</tex> where the net development rate ( <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>Delta g</tex> ) is the difference between solubility rates of the exposed ( <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>g</tex> ) and unexposed (g <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0</inf> ) sample. Three of these parameters characterize the lithographic response of the resist. They depend mainly on the resist composition but not on the processing conditions. E <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>e</inf> is a measure of the sensitivity and ranges from 10 to 20 mJ/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> of 405-nm light for useful resist formulations. The contrast parameter ( <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>m</tex> ) increases slowly with sensitizer concentration while the saturated solubility ratio ( <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>g_{infin}/g_{0}</tex> ) inereases very rapidly. The fourth parameter (g <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0</inf> ) depends strongly on processing parameters. It can readily be set to provide the desired development time, e.g., by adjusting the developer strength. On a more fundamental level, it is found that the dependence of the solubility on exposure can be expressed in a unified manner for all the resist formulations studied as <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>g approx g_{0} exp (2 times 10^{-20} n_{e})</tex> where n <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>e</inf> is the number of exposed sensitizer molecules per cubic centimeter." @default.
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• W2131419097 date "1980-05-01" @default.
• W2131419097 modified "2023-10-06" @default.
• W2131419097 title "Photosolubility of diazoquinone resists" @default.
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• W2131419097 doi "https://doi.org/10.1109/t-ed.1980.19957" @default.
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