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- W2131618883 endingPage "627" @default.
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- W2131618883 abstract "Basic mechanisms and ground-test data for radiation effects in solid-state imagers are reviewed, with a special emphasis on proton-induced effects on silicon charge-coupled devices (CCDs). For the proton fluxes encountered in the space environment, both transient ionization and displacement damage effects arise from single-particle interactions. In the former case, individual proton tracks will be seen; in the latter, dark-current spikes (or hot pixels) and trapping states that cause degradation in charge-transfer efficiency will be observed. Proton-induced displacement damage effects on dark current and charge transfer are considered in detail, and the practical implications for shielding, device hardening, and ground testing are discussed." @default.
- W2131618883 created "2016-06-24" @default.
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- W2131618883 date "1996-04-01" @default.
- W2131618883 modified "2023-10-01" @default.
- W2131618883 title "Proton effects in charge-coupled devices" @default.
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- W2131618883 doi "https://doi.org/10.1109/23.490905" @default.
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