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• W2131670067 abstract "The impact of supply voltage scaling on the retention time of a 2-transistor (2T) gain-cell (GC) storage array is investigated, in order to enable low-power/low-voltage data storage. The retention time can be increased when scaling down the supply voltage for a given access statistics and a given write bit-line (WBL) control scheme. Moreover, for a given supply voltage, the retention time can be further increased by controlling the WBL to a voltage level between the supply rails during idle and read states. These two concepts are proved by means of Spectre simulation of a GC-storage array implemented in 180-nm CMOS technology. The proposed 2-kb storage macro is operated at only 40% of the nominal supply voltage and leverages the GCs to enable two-port operation with a negligible area-increase compared to a single-port implementation." @default.
• W2131670067 created "2016-06-24" @default.
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• W2131670067 date "2012-05-01" @default.
• W2131670067 modified "2023-10-03" @default.
• W2131670067 title "Two-port low-power gain-cell storage array: Voltage scaling and retention time" @default.
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• W2131670067 doi "https://doi.org/10.1109/iscas.2012.6271800" @default.
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