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• W2131796616 abstract "A novel circuit design for separating single-event transients due to N-hits and P-hits is described. Measurement results obtained from a 65 nm technology using heavy-ions show different dominant mechanisms for charge collection for P-hits and N-hits. The data collected represent the first such separation of SET pulse widths for 65 nm bulk CMOS technology. For low LET particles, N-hit transients are longer, but for high LET particles, P-hit transients are longer. N-well depth and the parasitic bipolar effect are shown to be the most important parameters affecting transient pulse widths." @default.
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• W2131796616 date "2010-12-01" @default.
• W2131796616 modified "2023-10-03" @default.
• W2131796616 title "Independent Measurement of SET Pulse Widths From N-Hits and P-Hits in 65-nm CMOS" @default.
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• W2131796616 doi "https://doi.org/10.1109/tns.2010.2076836" @default.
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